InGaAs PIN Photodiode Detectors RT
Features
  • Low dark current, low capacitance and high responsivity.
  • Mesa structure and Dielectric Passivation.
  • Suitable for DC - 3GHz, and fiber optic applications.
Part # Diameter mm Resp. A/W @1.3μm Resp. A/W @1.55μm Dark Current nA Cutoff Freq. MHz Cap. pf Shunt Res. MΩ Peak D* cm*Hz½/W NEP W/Hz½
I5-.04-46 .040 .85 .90 .075 3000 .6 9000 >1012 <10-14
I5-.08-46 .080 .85 .90 .10 2200 .9 7000 >1012 <10-14
I5-.1-46 .100 .85 .90 .15 2000 1 6000 >1012 <10-14
I5-.3-46 .300 .85 .90 .4 350 5 900 >1012 <10-14
I5-.5-46 .500 .85 .90 .7 200 10 250 >1012 <10-13
I5-1-46 1.00 .85 .90 2 30 100 90 >1012 <10-13
I5-2-5 2.00 .85 .90 8 3 600 20 >1012 <10-13
I5-3-5 3.00 .85 .90 20 1.75 1200 9 >1012 <10-13
I5-5-8 5.00 .85 .90 30 .5 4000 2 >1012 <10-12
I5-10-3 10.00 .85 .90 100 .15 14000 .5 >1012 <10-12

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