Welcome to
New England Photoconductor

InGaAs PIN Photodiode

Part Number I-.10 I-.30 I-.50
Active Area Diameter um 100 300 500
Responsivity @ 1300nm A/W Min/Typ 0.80/0.90 0.80/0.90 0.80/0.90
Responsivity @ 1550nm A/W Min/Typ 0.90/0.95 0.90/0.95 0.90/0.95
Dark Current @ 5V nA Max/Typ 1.0/.05 5.0/1.0 25/5
Capacitance @ 5V pF Max/Typ 1.2/1.0 8.0/4.0 40@0V
Bandwidth 50Ω-3dB MHz Min @5V 2.0 0.7 0.20
Rise/Fall time RL= 50Ω ns Max @ 5V 0.1 0.25 0.50
NEP @ 1550nm W/√Hz Typ 1.5E-15 5E-15 8E-15
Storage Temperature °C -40 to 125 -40 to 125 -40 to 125
Operating temperature °C -40 to 85 -40 to 85 -40 to 85
Reverse Voltage V 25 25 20
Reverse Current mA 10 10 10
Forward Current mA 10 10 10
Package Options * (Note) CH-CE-46-46L CH-CE-46-46L CH-CE-46-46L

Part Number I-1 I-2 I-3 I-5
Active Area Diameter mm 1.0 2.0 3.0 5.0
Responsivity @ 1300nm A/W Min/Typ 0.80/0.90 0.80/0.90 0.80/0.90 0.80/0.90
Responsivity @ 1550nm A/W Min/Typ 0.90/0.95 0.90/0.95 0.90/0.95 0.90/0.95
Dark Current nA Max/Min 100/25 @5V 200/50 @1V 500/200 @1V 5000 @0.3V
C @ 0V pF Max/Min 120/80 500/300 1000/600 1500/1000
C pF Max/Min 50/30 @-5V 150/100@-3V 300/250@-2V 3000/2000
Bandwidth 50Ω-3dB MHz 40@5V 5.3@0V 4.0@0V 1@0V
T, RL= 50Ω ns Typ 5.0@5V 50@0V 100@0V 300@0V
Res, MΩ Min/Typ 10/50 6/30 2.0/8 0.025/0.050
NEP @1550 nm W/√Hz Typ .01 .03 .05 .28
Linear Range (±0.2dB) dBm 10 8 8 8
Storage Temperature °C -40 to 125 -40 to 125 -40 to 125 -40 to 125
Operating Temperature °C -40 to 85 -40 to 85 -40 to 85 -40 to 85
Reverse Voltage V 20 3 2 2
Reverse Current mA 10 10 10 10
Forward Current mA 10 10 10 10
Power Dissipation mW 100 50 50 50
Package Options * (Note) CH-CE-46-46L CH-CE-5 CH-CE-5 CH-CE-8

NOTE:   * CH = Chip   CE = Ceramic Carrier    46 = TO46 Hermetic Package    46L TO46 Hermetic Lens Package
5 = TO5 Hermetic Package    8 = TO8 Hermetic Package    ~    Custom filters, windows and packages are available

InGaAs
InGaAs

For more information or if you have questions about our infrared windows, please contact us